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Lithium ion battery electrode stress measurement system
Lithium ion battery electrode stress measurement system
Product details
By using a multi beam optical sensor system (kSA MOS) for in-situ real-time stress measurement and analysis, the influence of internal stress generated during the reaction kinetics or normal use of lithium-ion batteries on their electrochemical performance can be studied; That is, the stress changes on the surface of the lithium-ion battery shell during the charging and discharging process, and the relationship between the stress magnitude on the electrode surface of the lithium-ion battery and the charge state during the charging and discharging cycle is obtained; Furthermore, analyze the similarities and differences in stress changes during the charging and discharging process, namely the generation of irreversible stress and the non coincidence of charging and discharging curves.
Test schematic diagram:
Charging and discharging process:
Dynamic cycle process:
In situ thin film stress measurement system kSA MOS Film Stress Measurement System, also known as in-situ thin film stress gauge or in-situ thin film stress meter!
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Adopting non-contact laser MOS technology; Not only can it accurately perform statistical analysis on the stress distribution on the sample surface, but it can also perform two-dimensional stress and curvature imaging analysis on the sample surface; Customers can define and choose to use any one or a group of laser points for measurement; And this design always ensures that all laser spots in the array move or scan at the same frequency, effectively avoiding the influence of external vibrations on the test results; Simultaneously improve the resolution of testing; Suitable for stress analysis of various materials and thicknesses of thin films;
Typical users: Harvard University 2 sets, Stanford University, Johns Hopkins University, Brown University 2 sets, Karlsruhe Research Center,Max Planck Institute， Xi'an Jiaotong University, Chinese Academy of Metrology, semiconductor and microelectronics manufacturers (such as IBM, Seagate Research Center, Phillips Semiconductor, NEC, Nissan ARC, Nichia Glass Corporation), etc;
Related products:
*Real time in-situ thin film stress meter（kSA MOS Film Stress Tester）：Using multi beam MOS technology, it can be installed on various vacuum deposition equipment (such as: MBE, MOCVD, sputtering, PLD, PECVD, and annealing chambers ects）， Real time in-situ measurement and two-dimensional imaging analysis of stress changes during thin film growth process;
*Thin film thermal stress measurement system（kSA MOS Thermal-Scan Film Stress Tester）
*Film Stress Measurement System（kSA MOS Film Stress Measurement System）
Equipment Name:
kSA MOS Film Stress Tester, kSA MOS Film Stress Measurement System，kSA MOS Film Stress Mapping System;
Main features:
1. MOS multi beam sensor technology;
2. Single Port (directly above the sample) and Dual Port (symmetrical window) system design;
3. Suitable for MOCVD, MBE, Sputter，PLD、 Various vacuum thin film deposition systems such as evaporation systems and heat treatment equipment;
4. Function of testing and analyzing thin film stress anisotropy;
5. Measurement of growth rate and film thickness; (Optional)
6. Measurement of optical constants n&k; (Optional)
7. Multi substrate measurement function; (Optional)
8. Substrate rotation tracking and measurement function; (Optional)
9. Real time optical feedback control technology, multiple testing points can be set during system installation;
10. Professional design eliminates the influence of vacuum system vibration on measurement;
Testing function:
1.Real time in-situ thin film stress measurement
2. Real time in-situ thin film curvature measurement
3. Real time in-situ stress * film thickness curve measurement
4. Real time in-situ stress monitoring of the entire process of thin film growth
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